METHOD FOR INCREASING RADIATION RESISTANCE OF DEVICES BASED ON GALLIUM ARSENIDE Russian patent published in 2007 - IPC H01L21/263 

FIELD: electronic engineering, possible use when manufacturing devices based on gallium arsenide.

SUBSTANCE: method for increasing radiation resistance of devices based on gallium arsenide includes manufacturing devices and performing thermal processing, after manufacture devices are irradiated with fast neutron fluence in interval ranging from 1·10¹³ neutron/cm² to maximal fluence F_nmax, determined from formula neutron/cm², where F_nmax - maximal values of neutron fluence; - allowed level of change of starting concentration of electrons in active area of device; n₀, n_F - concentration of electrons in active area of device before and after irradiation, respectively, cm^-3; and after irradiation thermal processing is performed at temperature 200±20°C during 30-60 minutes.

EFFECT: increased resistance of devices based on gallium arsenide to irradiation by electrons and gamma-quanta.

1 dwg