SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 2007 - IPC H01L21/18 

FIELD: electronic engineering; manufacture of gallium arsenide based devices.

SUBSTANCE: proposed gallium arsenide based semiconductor devices are manufactured from device structures in which active-region electron concentration is higher than required to provide for desired output parameters; upon manufacture devices are irradiated with fast neutron fluency whose value is found from formula , where F_n is neutron fluency value; K = n₁/n₀ is variation level of original electron concentration in device active region when irradiated with fast neutron fluency F_n; n₀ is electron concentration in device active region before irradiation; n₁ is electron concentration in device active region after irradiation required to provide for desired output parameters, cm^-3; after irradiation devices are subjected to heat treatment at temperature of 200 ±20 °C for 30 -60 min.

EFFECT: enhanced resistance of devices to irradiation with electrons and gamma-quanta.

1 cl, 1 dwg