SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 2007 - IPC H01L21/18 

FIELD: electronic engineering; manufacturing gallium arsenide based devices.

SUBSTANCE: proposed gallium arsenide based devices are manufactured from device structures with active-region electron concentration higher than required to ensure desired output parameters of devices; upon manufacture devices are irradiated with fast neutron fluency whose value is found from formula F_n=(1-K)/(7.2·10^-4n₀ ^-0.77) neutron/cm², where F_n is neutron fluency value; K = n₁/n₀ is variation level of electron original concentration in device active region when irradiated with fast neutron fluency F_n; n₀ is electron concentration in device active region before irradiation, cm^-3; n₁ is electron concentration in device active region after irradiation needed to provide for desired output parameters, cm^-3; upon irradiation devices are given trial run with power continuously supplied to them at temperature of 85 ± 5 °C for 10-24 h.

EFFECT: enhanced resistance to irradiation with electrons and gamma-quanta.

1 cl, 1 dwg