FIELD: physics.
SUBSTANCE: in the structure of a pulsed avalanche S diode, which is based on gallium arsenide doped with iron, there is an additional high-resistivity π-type layer between the π- and ν-type layers. The additional high-resistivity π-type layer can be obtained by doping n-type gallium arsenide with a chromium dopant.
EFFECT: elimination of the effect of electron injection on flow of current during reverse bias of the π-ν-junction until diode switch over and high switching voltage.
2 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| PULSED AVALANCHE S-DIODE | 2015 |
|
RU2609916C1 |
| SEMICONDUCTOR EMITTER OF INFRARED RANGE | 2015 |
|
RU2596773C1 |
| RECEIVER OF ELECTROMAGNETIC RADIATION OF WIDE SPECTRAL RANGE | 2013 |
|
RU2536088C1 |
| METHOD OF MANUFACTURING A MAGNETO-RESISTIVE SPIN LED (OPTIONS) | 2020 |
|
RU2746849C1 |
| MAGNETORESISTIVE SPIN LED | 2020 |
|
RU2748909C1 |
| METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
| CRYSTAL OF ULTRAFAST HIGH-VOLTAGE HIGH-CURRENT ARSENIDE-GALLIUM DIODE | 2009 |
|
RU2472249C2 |
| HIGH-VOLTAGE HIGH-TEMPERATURE QUICK-ACTING THYRISTOR WITH FIELD CONTROL | 2010 |
|
RU2472248C2 |
| METHOD FOR PRODUCING EPITAXIAL STRUCTURES IN THE BASIS OF GALLIUM ARSENIDE | 1990 |
|
RU1771335C |
| METHOD FOR ELIMINATION OF STRUCTURE FLAWS IN SOLIDS | 1997 |
|
RU2124784C1 |
