SEMICONDUCTOR EMITTER OF INFRARED RANGE Russian patent published in 2016 - IPC H01L33/30 

FIELD: electricity.

SUBSTANCE: invention relates to semiconductor sources of electromagnetic radiation, in particular, to pulse radiators of infrared range, and it is intended for use in optoelectronic systems for different purposes. In S-diode containing π-ν-n structure based on gallium arsenide, compensated by admixture of iron or chromium, and metal contacts to external π- and n-areas between the output metal contact and n-area there is an additional over-alloyed layer of p-type conductivity with holes concentration exceeding the concentration of n-area base electrons. Due to introduction of high concentration of fine acceptor centers when forming p-layer, being the centers of radiative recombination, in the formed π-ν-n-p structure towards actuated π-ν and n-p junctions are formed; at that the working voltage polarity of biasing, n-p junction is actuated in the forward direction, thus providing high-efficiency conversion of electric current flowing in the structure into optical radiation.

EFFECT: invention provides increase of internal quantum yield and radiation power of the device.

1 cl, 3 dwg