FIELD: physics.
SUBSTANCE: invention relates to pulsed engineering, particularly to the pulsed avalanche semiconductor diodes obtained by GaAs doping with chromium or iron, and is intended for use in the pulsed power electronic systems. An additional region of the p-type conductivity, with the thickness of the p-layer not more than 5 Ln, where Ln is the diffusion length of electrons in the p-region, is introduced in the S-diode made on the base of the n-v-n-structure of gallium arsenide compensated with chromium, and between the n-regions.
EFFECT: effect elimination of electron injection on current flow at the reverse bias of -v-transition to the S-diode switching, increase of the switching voltage compared with the structures obtained by doping only with chromium or iron, increase of the operational reliability of such structures in the pulsed power circuits.
2 dwg
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