INDIUM OXOALKOXIDES FOR OBTAINING INDIUM OXIDE-CONTAINING LAYERS Russian patent published in 2016 - IPC C07F5/00 C23C18/12 

Abstract RU 2572784 C2

FIELD: chemistry.

SUBSTANCE: invention relates to halogen-containing indium oxoalkoxide of general formula In7O2(OH)(OR)12X4(ROH)x, in which R stands for alkyl with 1-15 carbon atoms, X stands for fluorine, bromine, iodine and x stands for number from 0 to 10 Also method of obtaining halogen-containing indium oxoalkoxide and thereof application are claimed.

EFFECT: invention makes it possible to obtain indium compounds, which can be used for formation of indium oxide-containing layers, possessing improved electric working characteristics.

8 cl, 1 dwg, 1 tbl, 1 ex

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RU 2 572 784 C2

Authors

Shtajger Jurgen

Fam Duj Vu

Tim Khajko

Merkulov Aleksej

Khoppe Arne

Dates

2016-01-20Published

2011-07-12Filed