FIELD: chemistry.
SUBSTANCE: invention relates to methods of making dielectric films for masking surfaces of silicon wafers during diffusion processes. A silicon dioxide film is made using a gas phase containing nitrogen, oxygen and hydrogen, with the following ratio of components: N2=400 l/h, H2=75 l/h, O2=750 l/h at temperature in the working zone of 1000°C. Control is done using a MPV-SP installation. Variation of thickness of the obtained silicon dioxide film lies between 3.5 and 4.0%.
EFFECT: obtaining a uniform and unbroken film of silicon dioxide without impurities.
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