FIELD: chemistry.
SUBSTANCE: method of silicium nitride films production from gas mixture containing dichlorosilane (SiH2Cl2) and ammonia (NH3), in which substrate is treated in the gas mixture at temperature 750°C during 20 minutes, components ratio: SiH2Cl2:NH2=10 l/h : 20 l/h.
EFFECT: even films with uniform thickness are obtained.
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