FIELD: electricity.
SUBSTANCE: in the process of silicium nitride film creation, plates are subjected to treatment in gas mixture consisting of dichlorosilane (SiH2Cl2) and ammonia (NH3) at temperature of 800°C for 20 minutes and with components ratio: SiH2Cl2: NH3=12 L/h: 20 L/h, where operating pressure is P=66 Pa. Spread in thickness of created dielectric silicium nitride film on plates is 3.5÷4.0%.
EFFECT: obtaining even and homogeneous thickness of silicium nitride film.
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