FIELD: chemistry.
SUBSTANCE: method includes forming, on the surface of a substrate, a thin layer of a silicon dioxide film by burning hydrogen and dry oxygen in a nitrogen medium, with the following consumption of gases: N2=450 l/h; H2=75 l/h; O2=750±50 l/h. The temperature of work area is 900±10°C. The variance of the thickness of the silicon dioxide film on the substrate is 3.0-3.5%.
EFFECT: obtaining a homogeneous and uniform dielectric film of silicon dioxide on a substrate surface at low temperatures.
3 ex
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RU2361316C2 |
