METHOD FOR PRECIPITATION OF MONOCRYSTALLINE FILM OF CUBIC BORON NITRIDE ON SEMI-CONDUCTOR SILICON SUBSTRATE Russian patent published in 2016 - IPC H01L21/36 

FIELD: chemistry.

SUBSTANCE: method makes it possible to obtain one-phase c-BN films directly on silicon substrate with small time and energy consumption; method is simple in control of precipitation process. For this purpose, in method of precipitation of monocrystalline film of cubic boron nitride on semi-conductor silicon substrate, which includes process of chemical gas-phase film precipitation, highly pure crystalline boron and ammonia are applied as source of initial reagents, and mixture of nitrogen with argon in ratio 10:1 is applied as gas-carrier. Simultaneously with process of chemical gas-phase precipitation of film of cubic boron nitride in zone of precipitation formed are ionic nitrogen and argon plasma with specific energy of plasma not less than 1 W/cm³, with negative potential being supplied to substrate, which ensures possibility of obtaining monocrystalline c-BN film directly on silicon substrate with high productivity of process and low cost of products. Before precipitation of cubic boron nitride film silicon substrate is placed with working surface to flow of mixture of initial reagents and gas-carrier with inclination relative to flow direction at angle, which is selected in range 7÷11°, and in process of precipitation substrate is rotated relative to normal in the center of its surface.

EFFECT: sufficient rate of precipitation and uniform film thickness along entire substrate surface.

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