DEVICE FOR PLASMA ETCH CHEMISTRY Russian patent published in 2014 - IPC H01L21/3065 

FIELD: electricity.

SUBSTANCE: device for plasma etch chemistry contains a vacuum chamber, HF AC voltage generator and substrate holder with a processed product. The generator is connected by high-frequency cable through the matching device to the plasma generating helical antenna, located in the vacuum chamber. Substrate holder interacts through the additional device with the HF AC voltage generator. The matching device is connected with the helical antenna by means of hollow shaft entering the vacuum chamber through the rotary motion vacuum feed-through. At the shaft end the hollow lever is rigidly fixed. The dielectric cap with the helical antenna inside is attached to the hollow lever with displacement from a spin axis of the hollow shaft. The hollow shaft and substrate holder have independent rotation drives. Software tools automatically regulate the speed of rotation of each drive, ensuring the necessary uniformity of the product etching.

EFFECT: minimising dimensions of the whole installation and decrease of power consumption.

2 cl, 4 dwg