MANUFACTURING METHOD OF SHF POWERFUL FIELD LDMOS TRANSISTORS Russian patent published in 2009 - IPC H01L21/336 

FIELD: physics; semiconductors.

SUBSTANCE: invention concerns electronic semiconductor engineering. Essence of the invention consists in the manufacturing method of SHF powerful field LDMOS-transistors, including forming of a primary sheeting on a face sheet of an initial silicon body with top high-resistance and bottom high-alloy layers of the first type of conductance, opening of windows in a primary sheeting, sub-alloying of the revealed portions of silicon an impurity of the first type of conductance, cultivation of a thick field dielectric material on the sub-alloying silicon sites in windows of a primary sheeting thermal oxidising of silicon, creation in a high-resistance layer of a substrate in intervals between a thick field dielectric material of elementary transistor meshes with through diffused gate-source junctions generated by means of introduction of a dopant impurity of the first type of conductance in a substrate through windows preliminary opened in a sheeting and its subsequent diffused redistribution, forming of connecting busbars and contact islands of a drain and shutter of transistor structure on a thick field dielectric material on a face sheet of a substrate and the general source terminal of transistor structure on its back side, before silicon sub-alloying and cultivation of a thick field dielectric material in windows of a primary sheeting a high-resistance layer of a substrate is underetched on the depth equal 0.48 - 0.56 of thickness of a field dielectric material, and before dopant impurity introduction in the formed source crosspieces of transistor meshes in a high-resistance layer of a substrate in sheeting windows etch a channel with inclined lateral walls and a flat bottom depth of 1.5 - 2.6 microns.

EFFECT: improvement of electric parametres of SHF powerful silicon LDMOS transistors and increase of percentage output of the given products.

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