SEMICONDUCTOR ELEMENT EMITTING LIGHT IN ULTRAVIOLET BAND Russian patent published in 2012 - IPC H01L33/06 H01L33/32 

FIELD: physics.

SUBSTANCE: semiconductor element has a multilayer structure made from group three metal nitride solid solutions. The multilayer structure includes a template on which an active layer and contact layers with a different type of conductivity are arranged in series. In order to prevent leakage of electrons from the active layer into the p-contact layer, the p-contact layer has polarity which is opposite that of the active layer. Due to such distribution of polarities, internal quantum efficiency considerably increases and, consequently, efficiency of converting electrical energy to radiation increases.

EFFECT: high efficiency of converting electrical energy to radiation by reducing leakage of charge carriers from the active region and the invention can be used in serial production.

4 cl, 1 dwg