SEMICONDUCTOR ELEMENT EMITTING LIGHT IN ULTRAVIOLET RANGE Russian patent published in 2005 - IPC

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of A^IIIB^V type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped Al_XGa_I-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is Al_yGa_I-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is Al_ZGa_{I Z}N_, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is Al_wGa_{1 - w}N, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 10¹⁹ cm^-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm.

EFFECT: enlarged ultraviolet emission range of semiconductor element.

1 cl, 1 dwg, 1 tbl