METHOD OF FORMING ORDERED STRUCTURES ON SURFACE OF SEMICONDUCTOR SUBSTRATES Russian patent published in 2016 - IPC H01L21/28 B82B3/00 

FIELD: nanotechnology.

SUBSTANCE: invention relates to a method of creating ordered stepped surface Si(111)7×7, coated with epitaxial layer of copper silicide Cu₂Si, and can be used in production of solid-state electronic devices, for example, gas or molecule sensors. Method of forming ordered steps on surface of semiconductor substrates involves preliminary deposition of copper layer with thickness 4 of monolayer on atomically-clean surface Si(111)7×7 with formation of a monoatomic layer of copper silicide Cu₂Si in conditions of ultrahigh vacuum at temperature 830±10 °C. Then sample is annealed at temperature 830±10 °C with direct current passing through Si(111) for 22±2 s, and an ordered surface is formed, consisting of steps with height 12±2 nm with even side faces and terraces of width 150±50 nm. Method makes it possible to control relief of surface of sample, in particular, to form ordered arrays of steps, oriented along direction of type <110> Si, depending on given process parameters.

EFFECT: possibility of using obtained samples, for example, as templates for formation of nanowires by inclined deposition of materials or for inducing uniaxial anisotropy in films made from ferromagnetic materials.

3 cl, 5 dwg