METHOD FOR CREATION OF CONDUCTING NANOWIRES ON SURFACE OF SEMICONDUCTOR SUBSTRATES Russian patent published in 2009 - IPC H01L21/28 B82B3/00 

FIELD: physics, semiconductors.

SUBSTANCE: invention is related to methods for creation of metal nanowires on surface of semiconductor substrates and may be used in creation of solid-state electronic instruments. Substance of invention: in method for creation of conducting nanowires on surface of semiconductor substrates, copper is deposited on surface of silicon Si(lll) with formation of buffer layer of copper silicide Cu₂Si at the temperature of 500°C under conditions of ultrahigh vacuum. Buffer layer of copper silicide is formed with monatomic thickness, afterwards at temperature of 20°C at least 10 layers of copper are deposited on atomic steps of buffer layer surface, which form nanowires of epitaxial copper that are oriented along atomic steps of substrate.

EFFECT: provides for creation of nanowires that possess high conductivity, with the possibility of these nanowires formation location control.

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