FIELD: electricity.
SUBSTANCE: invention is designed to sort CMOS microcircuit chips manufactured on silicon-on-insulator structures by radiation resistance. Statistically significant sample of microcircuit chips of selected type are radiated to the required dose with periodic measurements of static consumption current. For each microcircuit chip from the sample previously resistance of a test resistor "p-pocket" located on a crystal cut path is measured on plates. The norm is identified for resistance of the test resistor "p-pocket" by comparison of maximum values of static consumption current in process of dose gain and values of test resistor "p-pocket" resistance with account of the required norm for static consumption current for the selected type of microcircuit chips. Sorting of further batches of microcircuit chips is carried out by the criterion of resistance of "p-pocket" test resistor measured for each microcircuit chip on plates.
EFFECT: it is not required to radiate each microcircuit chip with sources of radiation, reduced time and labour inputs.
2 dwg
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