HIGH-POWER SHF TRANSISTOR Russian patent published in 2014 - IPC H01L29/772 

FIELD: electricity.

SUBSTANCE: SHF high-power transistor contains basic substrate of silicium, a heat-conductive polycrystalline diamond layer, a multilayer epitaxial structure on wideband III-nitrides, a buffer layer, a source, a gate, a drain and ohmic contacts. At that the basic substrate of silicium has thickness less than 10 mcm, the heat-conductive polycrystalline diamond layer has thickness of at least 0.1 mm, and at the surface of the epitaxial structure there is an auxiliary layer of heat-conductive polycrystalline diamond and a barrier layer of hafnium dioxide with thickness of 1.0-4.0 nm, which is placed under the gate, directly at the epitaxial structure made of a layer of solid AlGaN solution with n-conductivity.

EFFECT: increase of SHF-power output, effective removal of heat from the transistor active area and minimisation of current losses.

3 cl, 4 dwg