SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURING Russian patent published in 2014 - IPC H01L29/772 H01L21/335 

FIELD: electricity.

SUBSTANCE: semiconductor device comprises a thinned substrate of single-crystal silicon of p-type conductivity, oriented according to the plane (111), with a buffer layer from AlN on it, above which there is a heat conducting substrate in the form of a deposited layer of polycrystalline diamond with thickness equal to at least 0.1 mm, on the other side of the substrate there is an epitaxial structure of the semiconducting device on the basis of wide-zone III-nitrides, a source from AlGaN, a gate, a drain from AlGaN, ohmic contacts to the source and drain, a solder in the form of a layer including AuSn, a copper pedestal and a flange. At the same time between the source, gate and drain there is a layer of an insulating polycrystalline diamond.

EFFECT: higher reliability of a semiconducting device and increased service life, makes it possible to simplify manufacturing of a device with high value of heat release from an active part.

3 cl, 7 dwg