SHF HIGH-POWER TRANSISTOR WITH MULTILAYER EPITAXIAL STRUCTURE Russian patent published in 2014 - IPC H01L29/772 

FIELD: electricity.

SUBSTANCE: SHF high-power transistor with multilayer epitaxial structure contains a basic substrate of silicium, a heat-conductive polycrystalline diamond layer, epitaxial structure based on wideband III-nitrides, a buffer layer, a source, a gate, a drain and ohmic contacts. The heat-conductive polycrystalline diamond layer has thickness of 0.1-0.15 mm, and at the epitaxial structure surface between the source, gate and drain there is an auxiliary heat-conductive polycrystalline diamond layer, a barrier layer of hafnium dioxide and an auxiliary barrier layer of aluminium oxide placed in-series. At that the barrier layers of hafnium dioxide and aluminium oxide have total thickness of 1.0-4.0 nm, besides they are placed under the gate, at the epitaxial structure directly, as a layer of solid AlGaN solution with n-conductivity.

EFFECT: increase of heat transfer in the transistor active area and minimisation of current losses.

3 cl, 4 dwg