FIELD: chemistry.
SUBSTANCE: contact metallisation is formed on frontal and back surfaces of a multi-layered semi-conductor structure Ga(In)As/GaInP/Ga(In)As/Ge, grown on a germanium substrate, contacts are burned in, mesa is etched, the contact layer of the structure is removed by chemical-dynamic etching in a water solution of tetramethylammonium hydroxide and hydrogen peroxide with the quantitative ratio of components, respectively in wt %: tetramethylammonium hydroxide 0.7÷1.3, hydrogen peroxide 6.5÷17.7, water 92.8÷81.
EFFECT: improvement of the homogeneity and reproducibility of the structure contact layer etching, increase of photoelectric parameters.
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