METHOD OF MAKING HETEROSTRUCTURE SOLAR CELL Russian patent published in 2016 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making a heterostructure solar cell includes growing a semiconductor heterostructure on a germanium substrate, forming ohmic contacts on the back surface of the germanium substrate and on the front surface of the heterostructure, depositing an antireflection coating on the front surface of the heterostructure, forming a separating mesa through a photoresist mask by etching a first channel in the semiconductor heterostructure to the germanium substrate. Formation of the first channel is followed by passivation of the surface of the first channel with a dielectric material, followed by etching through a photoresist mask of a second channel in the germanium substrate with a depth of not less than 2 mcm and width which is 5-10 mcm narrower than that of the first channel and covering the second channel with a dielectric material.

EFFECT: method according to the invention increases the output of non-defective heterostructure solar cells and improves the reliability thereof, especially in a space environment.

2 cl, 2 dwg, 5 ex