MODULE OF SEMICONDUCTOR ELEMENT AND METHOD OF ITS MANUFACTURING Russian patent published in 2012 - IPC H01L23/12 H01L25/07 

Abstract RU 2458431 C2

FIELD: electricity.

SUBSTANCE: in a module of a semiconductor element, at least, one semiconductor element is placed between the first insulating pad, having a high specific heat conductivity, and the second insulating pad, comprising high specific heat conductivity, and the external peripheral part between the first insulating substrate and the second insulating substrate is sealed with the help of a sealing element, at the same time the semiconductor element is mounted on the first insulating substrate and the second insulating substrate by adhesion of the first insulating substrate with the help of a sealing element with the help of binding at ambient temperature, in order to adhere the first surface of interconnections with the first through interconnections, and adhesion of the semiconductor element electrode surfaces with the first surface of interconnections and the second surface of interconnections with the help of adhesion at room temperature.

EFFECT: result of invention consists in providing a semiconductor element module with high reliability, an electric connection and a thermal connection, and providing for sufficient cooling efficiency, offering a method for its manufacturing.

12 cl, 9 dwg

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Authors

Ueno Daisi

Vada Taro

Funajama Masakhiro

Kuroda Josikatsu

Kondo Juiti

Kobajasi Siniti

Nakano Kodzi

Fudzivara Kendzi

Takesita Teruo

Dates

2012-08-10Published

2008-02-14Filed