METHOD OF TREATING SUBSTRATES AND SUBSTRATE TREATED USING SAID METHOD Russian patent published in 2012 - IPC H01L21/308 

Abstract RU 2459312 C2

FIELD: physics.

SUBSTANCE: method of treating substrates involves sputtering fine particles together with compressed gas from a pipe under pressure onto the surface of a substrate, dispersing the particles, which are charged due to friction with the inner wall of the pipe under pressure, on the surface of the substrate, wherein the charged particles stick to the surface without aggregation, forming a concave-convex structure on the surface of the substrate by etching the surface of the substrate with particles as a mask and simultaneous removal of the mask by etching.

EFFECT: possibility of cutting the number of operations of the method of forming a concave-convex structure.

5 cl, 8 dwg

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RU 2 459 312 C2

Authors

Sakio Susumu

Takei Khideo

Sajto Kazuja

Vatanabe Kazukhiro

Iguti Sinsuke

Jamakava Khirojuki

Nakamura Kjuzou

Lin' Juj-Khsyn'

Chan Khuan-Chun

U Tun-Tszjun

Dates

2012-08-20Published

2008-11-13Filed