FIELD: physics.
SUBSTANCE: invention can be used in standalone random access memory (RAM) or can be integrated or embedded within devices which use RAM, such as microprocessors, microcontrollers, application specific integrated circuits (ASIC), system-on-chip (SoC), and other like devices. The invention provides memory which includes a memory cell and a method of forming a memory cell. The memory includes a substrate in a first plane. A metal connection extending to a second plane is provided. The second plane is essentially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided, having a first layer connected to the metal connection such that the first layer of the MTJ is directed along the second plane. The invention also provides another version of the memory.
EFFECT: invention provides low power consumption and better scalability.
22 cl, 11 dwg
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