FIELD: information technology.
SUBSTANCE: method of manufacturing a magnetic tunnel junction device, which involves forming a trench in a substrate, depositing a conductive terminal inside the trench, and depositing a magnetic tunnel junction (MTJ) structure inside the trench. The MTJ structure includes a fixed magnetic layer having a fixed magnetic orientation, a tunnel junction layer, and a free magnetic layer having a configurable magnetic orientation. The fixed magnetic layer is connected to the conductive terminal along an interface which extends virtually normal to the surface of the substrate. The free magnetic layer which is adjacent to the conductive terminal carries a magnetic domain adapted to store a digital value.
EFFECT: increasing information density in the memory without increasing the area of the circuit of each MTJ cell.
20 cl, 43 dwg
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