FIELD: information technology.
SUBSTANCE: magnetic random access memory (MRAM) comprising: an array of magnetic tunnel junction (MTJ) cells, each of the MTJ cells comprising multiple sidewalls, each of the multiple sidewalls having a free layer to carry a respective independent magnetic domain adapted to store a digital value; and a bottom wall connected to each of the multiple sidewalls, the bottom wall extending substantially parallel to the surface of the substrate, the bottom wall having a free layer.
EFFECT: design of high density memory without increasing the contour region of each of the MTJ cells.
24 cl, 21 dwg
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