MAGNETIC TUNNEL JUNCTION DEVICE WITH SEPARATE READ AND WRITE PATHS Russian patent published in 2012 - IPC G11C11/16

Abstract RU 2453934 C2

FIELD: information technology.

SUBSTANCE: invention relates to memory having a magnetic tunnel junction (MTJ) structure. The device includes a read path (102) connected to the MTJ structure and a write path (104) connected to the MTJ structure. The write path (104) is separate from the read path (102). The device also includes a pair of series-connected MTJ structures (106, 108), whereby the read path (102) comprises only one of the MTJ structure (108).

EFFECT: higher read and write margins in a STT-MRAM device and low write current required for storing data values in the STT-MRAM device.

21 cl, 20 dwg

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RU 2 453 934 C2

Authors

Chzhu Sjaochun'

Gu Shitsjun'

Li Sja

Kang Seung Kh.

Dates

2012-06-20—Published

2008-12-19—Filed