FIELD: manufacture of semiconductor materials for semiconductor devices.
SUBSTANCE: proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface by joint heating of substrate and carbon-containing material at temperature of 1100 to 1400 °C; used as carbon-containing material is solid material brought in mechanical contact with substrate.
EFFECT: facilitated procedure.
11 cl, 5 dwg
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