LIGHT-EMITTING DIODE Russian patent published in 2012 - IPC H01L33/38 

FIELD: physics.

SUBSTANCE: light-emitting diode chip (1), grown on an electrically insulating substrate (4) comprises a lower current-distributing layer (5) of a first conductivity type, a first electrode (2) and a vertical layer structure (5, 6, 7), the last two being formed on the lower current-distributing layer and horizontally separated from each other. The vertical layer structure comprises an active layer (6) and an upper current-distributing layer (8) of a second conductivity type above the active layer, and a second electrode (3) formed on the upper current-distributing layer. The geometry of the electrodes is such that the horizontal distance between the electrodes is shorter than the current spreading length of the chip. According to the present invention, a vertical trench (9) is formed between the electrodes (2, 3), the trench extending through the chip (1), including the lower current-distributing layer (5), for controlling horizontal current flow in order to achieve constant current density in the active layer (6).

EFFECT: design of the light-emitting diode chip according to the invention improves its operating characteristics and reliability by improving uniformity of current distribution in the light-generating region of the chip.

3 cl, 4 dwg