LIGHT-EMITTING DIODE Russian patent published in 2015 - IPC H01L33/36 

FIELD: chemistry.

SUBSTANCE: light-emitting diode contains epitaxial structure based on solid solutions of nitrides of third group metals, which includes successively placed in direction of epitaxial growth layer of n-type conductivity, active layer with p-n-transition, layer of p-type conductivity, as well as metal contact sites to layer of n-type conductivity, placed in hollows, formed in epitaxial structure at the level of n-type conductivity layer, and light-emitting diode contains metal p-contact layer, intended for its application as positive electrode, applied above p-type conductivity layer, insulation layer, which covers metal p-contact layer and internal side surface of hollows, formed in epitaxial structure, and metal p-contact layer, intended for application as negative electrode, which covers insulation layer and contacts with each metal contact site to p-type conductivity layer, according to invention metal contact areas to n-type conductivity layer in horizontal plane of light-emitting diode section look as two narrow extended belts, each of which is placed on periphery of one of the halves of said section and passes along larger part of its border with indent from it, first and second end parts of one belt are placed with clearance respectively relative to first and second end parts of second belt. Said belts form figure, configuration of which corresponds to configuration of light-emitting diode perimeter, with a gap in its middle part.

EFFECT: increase of current density homogeneity in active area of light-diode and reduction of successive electric resistance.

2 cl, 4 dwg