MEDIUM-WAVE INFRARED SEMICONDUCTOR DIODE Russian patent published in 2015 - IPC H01L33/36 H01L31/101 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor devices designed to detect and emit infrared radiation at room temperature and can be used, for example, in devices which measure characteristics of media containing gaseous hydrocarbons and in fibre-optic sensors which measure the composition of a liquid by vanishing wave method, for which said band coincides with the fundamental absorption maximum of the measured component, for example, alcohol or petroleum products. A medium-wave infrared semiconductor diode (1) comprises a heterostructure with a substrate (2) and flat epitaxial p- and n-regions (3, 4), a p-n-junction (5), contacts (6, 7), etching mesastructure (10), wherein the contact (7) of the inactive region (8) is situated laterally from the active region (9), and the cross dimension thereof is selected based on the maximum mesastructure dimension, and the minimum distance between edges of the mesastructure and the chip is selected based on the size of the chip. The mesastructure has an extension in the direction towards the light-outputting surface and, like contacts, has a rounded rectangular shape.

EFFECT: diode according to the invention provides high brightness and photosensitivity to radiation in the middle infrared region of the spectrum.

17 cl, 9 dwg