PROCESS OF MANUFACTURE OF SEMICONDUCTOR STRAIN GAUGES BASED ON SAMARIUM MONOSULFIDE Russian patent published in 1995 - IPC

Abstract SU 1820790 A1

FIELD: semiconductor equipment. SUBSTANCE: edge sections of strain-sensitive layer of samarium monosulfide are removed nonmechanically, in particular, by working in etching agent of following composition, in parts by volume: 1,0 part of concentrated hydrochloric acid per 650 parts of 5% of aqueous solution of thiocarbamide. EFFECT: facilitated manufacture. 2 cl, 2 dwg

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SU 1 820 790 A1

Authors

Kaminskij V.V.

Sosova G.A.

Volodin N.M.

Dates

1995-03-27—Published

1991-05-30—Filed