SEMICONDUCTOR GAS SENSOR Russian patent published in 2006 - IPC G01N27/12 

FIELD: gas analysis technologies, in particular, engineering of detecting devices, used for registration and measuring of content of micro-admixtures of ammonia and other gases, possible use in ecology.

SUBSTANCE: in sensor, containing semiconductor base and substrate, semiconductor base is made of polycrystalline film of cadmium sulfide, alloyed by gallium arsenide, and as substrate, electrode area of piezo-quartz resonator is utilized.

EFFECT: increased sensitivity and manufacturability of sensor.

3 dwg