SEMICONDUCTOR AMMONIA TRACE CONTAMINATION SENSOR Russian patent published in 2016 - IPC G01N27/12 

FIELD: measuring equipment.

SUBSTANCE: invention relates to gas analysis, in particular, to detecting devices used for recording and content change of trace impurities of ammonia. Ammonia trace contamination sensor includes semiconductor base and substrate, semiconductor base is made from polycrystalline film of solid solution of zinc telluride in gallium antimonide (GaSb)_0.90(ZnTe)_0.10, and substrate is electrode platform of crystal resonator.

EFFECT: proposed sensor with considerable simplification of its manufacturing technology makes it possible to determine content of ammonia with sensitivity, which is by several times greater than existing sensors.

1 cl, 3 dwg