AMMONIA SEMICONDUCTOR SENSOR Russian patent published in 2017 - IPC G01N27/12 

Abstract RU 2613482 C1

FIELD: chemistry.

SUBSTANCE: invention relates to gas analysis and specifically to the detection devices used to detect and measure trace elements of ammonia and can be used for environmental monitoring. The sensor comprises a semiconductor base and a substrate. The semiconductor base is made of solid solution polycrystalline film with composition of (CdTe)0,5(CdS)0,5, and the electrode area of a piezoelectric crystal resonator serves as the substrate.

EFFECT: invention enables to determine content of ammonia with sensitivity which is several times higher than that of existing sensors.

3 dwg

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RU 2 613 482 C1

Authors

Dates

2017-03-16Published

2015-11-13Filed