NANOSEMICONDUCTOR GAS SENSOR Russian patent published in 2014 - IPC G01N27/12 

Abstract RU 2530455 C1

FIELD: measuring instrumentation.

SUBSTANCE: ammonia trace contamination sensor includes semiconductor base and substrate. Semiconductor base is made out of polycrystalline cadmium sulphide nanofilm reinforced with cadmium telluride. Electrode pad of pieso-quartz resonator serves as substrate.

EFFECT: significantly simpler design of sensor, several times higher sensitivity than that of existing sensors.

3 dwg

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RU 2 530 455 C1

Authors

Kirovskaja Iraida Alekseevna

Nor Polina Evgen'Evna

Dates

2014-10-10Published

2013-02-08Filed