FIELD: nanotechnology.
SUBSTANCE: in conditions of ultrahigh vacuum on the preformed stepped surface of copper silicide, make the uniform single-crystal nanowires of the specified width by the metal deposition at low tilt angles in the interval of 10°÷30° to the substrate plane with the metal coating thickness equal to 20 nm.
EFFECT: provision of the possibility to create the ordered metal nanowires array with the specified geometry and the block monocrystalline structure.
5 cl, 3 dwg
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