METHOD FOR FORMING MASSIVE OF FERROMAGNETIC NANOWIRES ON STEPPED SURFACE OF SEMICONDUCTOR SUBSTANCES WITH BUFFER COPPER LAYER Russian patent published in 2017 - IPC B82Y40/00 H01L21/20 

FIELD: metallurgy.

SUBSTANCE: method for forming a massive of ferromagnetic nanowires involves the formation of an ordered stepped structure of copper silicide Cu₂Si in the conditions of ultrahigh vacuum on the preliminary prepared surface of vicinal silicon Si(111), on the substrate surface Cu₂Si/Si(111) a buffer copper layer is deposited with a thickness of 2 nm, followed by the formation of epitaxial massive of ferromagnetic nanowires with the given geometric parameters on the surface of the ferromagnetic metal deposition at small angles in the interval (10°÷30°) to the plane of the stepped substrate with a copper buffer layer.

EFFECT: ensuring the possibility of efficient formation of a massive of ordered ferromagnetic nanowires.

6 cl, 5 dwg, 4 ex