SEMICONDUCTOR DEVICE WITH NEGATIVE RESISTANCE (VERSIONS) Russian patent published in 2014 - IPC H01L29/772 

FIELD: electricity.

SUBSTANCE: suggested device unites three field effect transistors into a unified vertical structure with channels of n- and p-type conductivity thus forming an electrical junction between them, at that the source of p-type channel is located opposite the source of n-type channel, and the source of p-type channel is located opposite the source of n-type channel. Sources of the channels are interconnected by a conductor and an additional zone with n⁺-type conductivity where the source of n-type channel is formed, and drains of the channels have separate outputs. The device can be equipped with one gate (three-terminal device - version 1) or two gates (four-terminal device - version 2) located at the other (second) lateral side of the channels. Current in the channels passes in one direction and creates back voltage in the junction thus locking the channels. The device can contain more than one structure, at that gates are common for neighbouring structures.

EFFECT: invention allows reducing dimensions, increasing operational speed, current and output power of the device.

4 cl, 6 dwg