METHOD TO CONTROL CURRENT AND DEVICE FOR ITS REALISATION Russian patent published in 2014 - IPC H01L29/80 

Abstract RU 2525154 C1

FIELD: electricity.

SUBSTANCE: control of current value in an instrument with a vertical structure comprising a conducting area with n-type of conductivity (n-area), an anode, which is located on the lower side of the n-area, a control electrode formed on the upper side of the n-area and forming a Schottky barrier with it, and a cathode arranged on the side surface of the n-area between the anode and the control electrode, is carried out by variation of the area and accordingly resistance of the ohmic contact between the cathode and the n-area. The instrument may contain more than one unit structure, at the same time adjacent unit structures are combined into a new structure with two cathodes, a single n-area with an anode and a control electrode.

EFFECT: invention makes it possible to increase efficiency and current and output capacity of an instrument.

3 cl, 5 dwg

Similar patents RU2525154C1

Title Year Author Number
SOLID-STATE FIELD CURRENT REGULATOR 2014
  • Jurkin Vasilij Ivanovich
RU2574314C1
SEMICONDUCTOR DEVICE WITH LAMBDA DIODE CHARACTERISTICS 2011
  • Jurkin Vasilij Ivanovich
RU2466477C1
SEMICONDUCTOR DIODE WITH NEGATIVE RESISTANCE 2012
  • Jurkin Vasilij Ivanovich
RU2550310C2
SEMICONDUCTOR DEVICE WITH NEGATIVE RESISTANCE (VERSIONS) 2012
  • Jurkin Vasilij Ivanovich
RU2513644C1
CMOS-TRANSISTOR WITH VERTICAL CHANNELS AND COMMON GATE 2012
  • Jurkin Vasilij Ivanovich
RU2504865C1
METAL-BASE TRANSISTOR 2015
  • Jurkin Vasilij Ivanovich
RU2583866C1
HIGH-FREQUENCY DEVICE ON GUNN EFFECT 1992
  • Kanevskij Vasilij Ivanovich
  • Sukhina Jurij Efimovich
  • Il'In Igor' Jur'Evich
RU2014673C1
GUNN-EFFECT SEMICONDUCTOR DEVICE 1993
  • Kanevskij Vasilij Ivanovich[Ua]
  • Koshevaja Svetlana Vladimirovna[Ua]
  • Sukhina Jurij Efimovich[Ua]
  • Kozyrev Jurij Nikolaevich[Ua]
RU2054213C1
GUN-EFFECT HIGH-FREQUENCY DEVICE 1995
  • Kanevskij Vasilij Ivanovich[Ua]
  • Sukhina Jurij Efimovich[Ua]
RU2086051C1
METAL SEMICONDUCTOR DEVICE 2014
  • Jurkin Vasilij Ivanovich
RU2559161C1

RU 2 525 154 C1

Authors

Jurkin Vasilij Ivanovich

Dates

2014-08-10Published

2013-02-18Filed