CONTROLLED INPUT RECEIVING DEVICE FOR LOW-POWER HIGH-SPEED INTERFACE Russian patent published in 2012 - IPC H03K19/175 

Abstract RU 2468509 C2

FIELD: radio engineering.

SUBSTANCE: receiving device can be configured with an auxiliary p-MOSFET with Vref monitoring or a resolved multistage auxiliary p-MOSFET to allow the receiving device to operate at Vref=0 V like a conventional receiving CMOS device. The receiving device can also be configured by an auxiliary n-MOSFET with Vref monitoring to allow the input receiving device based on Vref to operate with possibility of programming on bias current and trip point at Vref=(0.5-0.7) Vdd, depending on the ratio of impedance the driving device before the last to the parallel terminal impedance for switching on/off the chip.

EFFECT: possibility of maintaining a wide range of reference voltage Vref, wherein the described versions of the invention are efficient in terms of area, power and throughput.

25 cl, 9 dwg

Similar patents RU2468509C2

Title Year Author Number
DEVICE FOR CORRECTING PULSE RATIO OF INPUT SIGNAL 2011
  • Makarov Aleksandr Borisovich
RU2467473C1
CONTENT-ADDRESSABLE MEMORY WITH COMPOUND PARALLEL-SERIAL SEARCH 2006
  • Joon Sej Seung
  • Dzung Seong-Ook
RU2406167C2
MEMORY DEVICE BASED ON CHANGE IN RESISTANCE 2014
  • Takakhasi Masakhiro
  • Katayama Akira
  • Kim Dong Keun
  • Okh Bioung Chan
RU2620502C2
REFERENCE VOLTAGE SOURCE 2021
  • Ivanov Pavel Yurevich
  • Ivanov Yurij Pavlovich
RU2767980C1
CHARGE OR PARTICLE DETECTION 2003
  • Zharron P'Er
RU2339973C2
TERNARY CMOS WITH NOR LOGIC ELEMENT 2011
  • Murashev Viktor Nikolaevich
  • Zabednov Pavel Vladimirovich
  • Ivshin Pavel Aleksandrovich
  • Baranov Aleksandr Nikolaevich
  • Legotin Sergej Aleksandrovich
RU2468510C1
INTEGRAL ELECTRONIC CMOS SYNAPSE 2023
  • Ryndin Evgenii Adalbertovich
  • Andreeva Natalia Vladimirovna
RU2808951C1
TERNARY CMOS "NOT" LOGIC ELEMENT 2011
  • Murashev Viktor Nikolaevich
  • Zabednov Pavel Vladimirovich
RU2481701C2
CMOS EXCLUSIVE-OR LOGIC GATE 2023
  • Shubin Vladimir Vladimirovich
RU2814896C1
RING CMOS VOLTAGE CONTROLLED OSCILLATOR 2011
  • Bystritskij Sergej Alekseevich
  • Kljukin Vladimir Ivanovich
  • Bystritskij Aleksej Viktorovich
RU2455755C1

RU 2 468 509 C2

Authors

Kvon Chang Ki

Dates

2012-11-27Published

2008-05-28Filed