TERNARY CMOS WITH NOR LOGIC ELEMENT Russian patent published in 2012 - IPC H03K19/948 H03K19/20 

FIELD: radio engineering.

SUBSTANCE: electrical circuit of a ternary CMOS with a NOR logic element, having first and second input and output buses, a common bus and a supply bus, first and second n-MOS transistors and first and second p-MOS transistors, wherein gates of the first n-MOS and p-MOS transistors are connected to the first input bus, and gates of second n-MOS and p-MOS transistors are connected to the second input bus; the source of the first n-MOS transistor is connected to the common bus and its drain is connected to the source of the second n-MOS transistor; the source of the first p-MOS transistor is connected to the supply bus; wherein the electrical circuit has two additional capacitors, the first connected to the drain of the second n-MOS transistor and the output bus and the second to the drain of the second p-MOS transistor and the output bus, wherein the source of the second p-MOS transistor is connected to the drain of the first p-MOS transistor.

EFFECT: high information capacity of logic elements.

11 dwg, 1 tbl