REFERENCE VOLTAGE SOURCE Russian patent published in 2022 - IPC G05F3/24 

Abstract RU 2767980 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to electrical engineering, automation, electronics, microelectronics and can be used in designing integrated circuits, voltage stabilizers, analogue-to-digital and digital-to-analogue converters and other automation elements. Task to be solved by the present invention consists in creation of a compact, low-power, easy-to-manufacture device with high stability of output voltage at change of supply voltage and temperature. Said result is achieved due to the fact that the device comprises a first TP1, a second TP2, a third TP3 and a fourth TP4 p-channel MOS transistors, the first TN1 and the second TN2 are n-channel MOS transistors, the first R1 and the second R2 resistors, the power supply output of the upper level VDD, the power supply output of the lower level VSS, the reference voltage output VREF.

EFFECT: wider range of devices for the same purpose, in terms of the possibility of maintaining the stability of the generated output reference voltage when the supply voltage and temperature change, while simplifying the circuit and increasing its homogeneity, reducing power consumption and reducing the area occupied on the chip.

1 cl, 4 tbl, 1 dwg

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RU 2 767 980 C1

Authors

Ivanov Pavel Yurevich

Ivanov Yurij Pavlovich

Dates

2022-03-22Published

2021-07-21Filed