FIELD: physics.
SUBSTANCE: invention provides a high-efficiency semiconductor photodiode for detecting infrared radiation, which has two mesas formed on the substrate, the surface of one of which is a sensitive area and the other is a contact area, and back and front ohmic contacts. The back contact is solid and is deposited on the side of the substrate and the front contact is in form of a bridge, wherein the longitudinal axis of the bridge is directed at an angle of 40-50° to the crystal direction {110} of an A3B5 substrate. The bridge is electrically insulated from the mesa with the contact area by an anodic oxide and at least one dielectric layer deposited on it.
EFFECT: high efficiency of the photodiode owing to simultaneous increase in operating speed and detecting capacity of the device.
5 ex, 2 dwg
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