METHOD OF PRODUCING DIODES OF MEDIUM-WAVE INFRARED SPECTRUM Russian patent published in 2016 - IPC H01L31/18 H01L33/40 

FIELD: electricity.

SUBSTANCE: invention relates to optoelectronic engineering and specifically to semiconductor devices designed to detect and emit infrared radiation at room temperature. Method of producing diodes medium-wave infrared spectrum range according to invention involves making a multilayer epitaxial heterostructure, comprising a substrate made from semiconductor material A³B⁵ and p- and n-areas separated by a p-n junction, at least one of which is made from semiconductor material with total content of indium atoms and arsenic of not less than 40 % and is optically active in operating wavelength range, preparation of surface for forming ohmic contacts, application of photosensitive material on surface, exposing through mask with system of dark and light fields, development, removal of at least part of photosensitive material, epitaxial structure and substrate, vacuum sputtering of a metal composition of given shape, containing atoms of Cr, Au, Ni and impurities, formation of at least one mesa structure, wherein process of sputtering metal composition is started from Cr layer.

EFFECT: invention increases efficiency of operation of diode due to improved quality of ohmic contacts.

20 cl, 6 dwg, 3 tbl, 10 ex