METHOD FOR MANUFACTURING PHOTODIODES OF THE MEDIUM-WAVE IR SPECTRAL RANGE Russian patent published in 2020 - IPC H01L31/18 

FIELD: optoelectronic engineering.

SUBSTANCE: invention relates to optoelectronic equipment, namely to methods of making semiconductor devices intended for detecting infrared (IR) radiation at room or other operating temperature. Method of producing photodiodes (PD) of the medium-wave IR spectral range includes growing, on a substrate from indium arsenide, a solid solution of InAs_1-x-ySb_xP_y and layers of p- and n-type conductivity separated by a p-n junction, applying a photosensitive material on the heterostructure surface, exposing through the mask to the system of dark and light fields, developing, removing at least a portion of the photosensitive material, the substrate and the epitaxial structure when forming mesa(s), surface preparation for formation of ohmic contacts, sputtering of metal compositions of preset geometry on surface of layers and / or substrate. Method also includes the final stage of the process of removal of the substrate or its part during chemical etching in an aqueous solution of hydrochloric acid after the heterostructure is mounted on a contact plate.

EFFECT: invention enables to obtain multi-element PD, for example, two-dimensional PD matrices, simultaneously with a wide range of photosensitivity and optically and electrically isolated elements.

1 cl, 11 dwg, 1 ex