MIS TRANSISTOR-BASED POWER SWITCH Russian patent published in 2014 - IPC H03K17/00 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to pulse engineering and can be used in different switching devices. The MIS transistor-based power switch comprises a transformer, a resistor, a diode and two p-n-p- and n-p-n-type transistors; the emitter of the p-n-p transistor is connected to the beginning the secondary coil of the transformer, the end of which is connected to the source of the MIS transistor, and through the resistor to the base of the p-n-p transistor, the collector of which is connected through the diode in reverse bias to the gate of the MIS transistor; the transformer includes an additional secondary coil, the beginning of which is connected to the end of the secondary coil of the transformer and the end of the additional secondary coil is connected through an additional resistor to the base of the n-p-n transistor, the collector-emitter junction of which is connected in parallel to the gate-source leads of the MIS transistor.

EFFECT: high reliability.

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